| 发明名称 |
Solar cells based on CuInS2 and process for their manufacture |
| 摘要 |
Solar cells with photoanodes of semiconductor material based on CuInS2, especially those manufactured in a specially adapted process, allow the conversion of light into electrical energy at high efficiency. The composition according to the invention of the semiconductor material is characterised by foreign phases, namely In2S3, In and/or Cu2-xS (0 </= x </= 1) in a concentration of between 0.5% and 5% each in the CuInS2. The energy gap of this material is at 1.5eV. Using these, working electrodes for photoelectrochemical solar cells or solid-state solar cells can be constructed. <IMAGE>
|
| 申请公布号 |
DE3615889(A1) |
申请公布日期 |
1986.11.13 |
| 申请号 |
DE19863615889 |
申请日期 |
1986.05.09 |
| 申请人 |
HAHN-MEITNER-INSTITUT FUER KERNFORSCHUNG BERLIN GMBH |
发明人 |
GOSLOWSKY,HANS,DR.;LEWERENZ,HANS-JOACHIM,DR.RER.NAT.;SEBASTIAN,DR.RER.NAT. FIECHTER,MANUEL;HUSEMANN,KARL-DIETER,DIPL.-PHYS. |
| 分类号 |
H01G9/20;H01L;H01L31/032;H01L31/18;H01M14/00;(IPC1-7):H01L31/06 |
主分类号 |
H01G9/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
