| 摘要 |
PURPOSE:To drive a highly loaded with line at high speed and high level by a simple construction and to shorten an access time by adding an NMOS pass FET and a powre source switch to the control FET of a word line boosting circuit. CONSTITUTION:During driving the word line, a control signal phi3 is changed from H to L, the NMOST 4 for pulling down is turned off and the end of a boosting capacitor 6 is separated from a VSS. Then, phi2 is changed from L to H and an electric potential low by VTH from VDD is transfered to an electric charge supplying NMOST 3. At this time, a capacity between a gate drain and a gate source parasitic to the MOST 3 is charged. Further, phi1 is changed from H to L, a power source switch 1 is turned on, the VDD and Q1 are connected, the gate of the MOST 3 is boosted by a parasitic capacity, and thereafter, the capacity 6 is charged. After the completion to the charge, according to the change of phi1-phi3, the out of an electric charge to the power source is prevented and the boosting is performed.
|
