| 摘要 |
PURPOSE:To contrive the improvement in photoelectric conversion efficiency by inserting a ZnSe layer between an Si region and a compound semiconductor region. CONSTITUTION:A P-Si layer 2 is formed on an N-Si substrate 1 by boron diffusion and a ZnSe layer 3A is deposited on that by the molecular beam epitaxial technique, and then is recrystallized under high pressure. Further on that, an N-GaAs layer 4 doped with a VI-group element and a P-GaAs layer 5 are grown by epitaxial growth. An Si nitride film 6 for preventing reflection and electrodes 7 and 8 are arranged on the surface. When the substrate is irradiated with the solar light, etc. from above, the light of a relatively short wavelength region is absorbed by the P-N junction composed of the N-GaAs layer 4 and the P- GaAs layer 5 and is converted into electricity. Next, the light transmitted through the layers 4, 5 and 3A is photoelectrically converted in the P-N junction between the substrate 1 and the layer 2 and the photoelectric current is taken out from the electrodes 7 and 8 through the layer 3A. |
