| 摘要 |
PURPOSE:To produce defect detecting wafer masking material with high reliability, easy for dryetching and doing less damage to substrate, by a method wherein a metallic silicide film is formed on a transparent substrate. CONSTITUTION:A transparent substrate 3 made of single crystal sapphire is used for defect detecting wafer masking material to form an MoSi2 film 4 1,000Angstrom thick thereon; around 500-1,000Angstrom /min of etching speed is attained using mixed gas of CF4+O2(2%) subject to the conditions of 0.2torr 300W; damage to the sapphire substrate 3 caused by ion or plasma is minor due to dryetching process in addition to the high speed of etching process. Through these procedures, the masking material with high reliability and excellent adhesive property can be produced. |
