| 摘要 |
PURPOSE:To constitute a bipolar transistor by a method wherein impurity is diffused through a polycrystalline silicon film isolated by an insulating film, source and drain regions are formed by self-alignment to occupy smaller areas, junction capacity is reduced, and a shallow base-emitter junction is realized. CONSTITUTION:The main portion of a bipolar transistor TR is constituted of a base region 7, graft base region 17, collector contact region 10, and an emitter region 11, all positioned on a P-type semiconductor substrate 1. A P-type MOSTR is constituted of a P-type source and drain region 8, gate electrode 16 and others, and an N-type MOSTR is constituted of an N-type source and drain region 13, the gate electrode 16, and others. The source and drain regions 8 of this bipolar transistor TR and of the P-type TR are simultaneously built when a P-type impurity is introduced through the intermediary of a polycrystalline silicon film 22a separated by a field oxide film. Similarly, the emitter region 11 and the source and drain regions 13 of the N-type MOSTR are simultaneously built when an N-type impurity is introduced through the intermediary of the polycrystalline silicon film 22a. |
