| 摘要 |
PURPOSE:To improve the capability of a static breakdown preventing unit by a method wherein a current controlling resistance body, first and second static breakdown preventing diodes constituted of semiconductors low in impurity concentration, and a lateral-structure transistor so that the capability may be enhanced to withstand static breakdown due to positive or negative surge voltages. CONSTITUTION:First and second n<+>-type imbedded regions 2 and 3, high in impurity concentration, and p<+>-type isolating regions 4 and 5 are formed on a p<+>-type semicon ductor substrate 1. n<->-semiconductor layers 6, 7, and 8, low in impurity concentration, are formed on the substrate 1 and regions 2 and 3. In addition, n<->-type diffused regions 9, 10, and 11, to be first, third, and fourth semiconductor regions, respectively, and a second p-type diffusion region 12 are formed. Further, between the semiconductor layers 6, 7, and 8, isolating oxide regions 13 and 14 are formed. An input terminal 15 and power terminal VCC are connected to each of the regions 9-12, and a power terminal VEE is connected to the substrate 1. A static breakdown preventing unit is composed of an input n-p-n transistor TR 16, power controlling resistance body 17, static breakdown preventing diodes 18 and 19, and a static breakdown preventing transistor TR 20. |
