| 摘要 |
PURPOSE:To prevent the decline of photoelectric conversion efficiency by keeping the impurity concentration of Na and oxygen of the intrinsic or virtually intrinsic amorphous single crystal semiconductor doped with hydrogen or halogen element and arranged on a substrate under a predetermined value. CONSTITUTION:A transparent conductive film 33 and further a P-type silicon carbide (SixC1-x, 0<x<1) or a P-type silicon semiconductor 32 are formed to a predetermined thickness on a synthetic crystal glass substrate 10. After this reaction system is evacuated sufficiently by a turbo molecular pump, an intrinsic semiconductor layer is formed of the refined silane. Evacuation is made again so as to form an N-type semiconductor layer 35 to a predetermined thickness by mixing methane with silane and further mixing phosphine by 1% concentration with that. Then a reflective electrode, for example, silver or aluminum 36 is evaporated. Accordingly, the impurity concentration of Na and oxygen of the amorphous single crystal semiconductor which is intrinsic or virtually intrinsic and is doped with hydrogen or halogen element can be made 5X10<18>cm-<3> or under. |
