| 摘要 |
<p>A metal or metal silicide is selectively grown on a nucleating layer (14) having a predetermined pattern on an insulating layer (12), and on a substrate (11) in an opening (13) in the insulating layer (12), to form a metal or metal silicide layer (15) in contact with the substrate (11) in the opening (13) and extending therefrom along the pattern of the nucleating layer (14). This process is advantageous in that a high electroconductive metal or metal silicide layer (15) having a precise pattern can be easily formed.</p> |
