| 摘要 |
PURPOSE:To form a capacitor of large capacity on an Si substrate of small area by a method wherein an oxide film on a semiconductor substrate is nitrided to be an oxi-nitride film, and thereby a capacitor is formed between the electrode and the substrate. CONSTITUTION:An element-isolating insulation film 2 is formed on an Si substrate 1, and a vertical groove is formed in the substrate 1 by a pattern of a photoresist 3. After this resist 3 is removed, a prescribed processing is applied to form a super-thin thermally-oxidized SiO2 film 4 on the substrate 1. Moreover, SiO4 4 is so nitrided as to be a thermally-nitrided oxi-nitride 5 of prescribed thickness. By using this nitride film as an electrode, polycrystalline Si 6 is connected to form a desired capacitor by processing. The capacitor is formed between the electrode and the substrate, and thus a capacitor of large capacity is formed on the Si substrate of small area. |
