发明名称 |
Temperature compensated active resistor |
摘要 |
A temperature compensated active resistor for use on an integrated circuit semiconductor chip is formed of a N-channel MOS transistor, a string of first, second and third transistors connected as a series of diodes, and a P-channel MOS transistor. The P-channel MOS transistor has its drain electrode connected to an output terminal in which a resistance value at the output terminal remains substantially constant over a relatively wide temperature range.
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申请公布号 |
US4622476(A) |
申请公布日期 |
1986.11.11 |
申请号 |
US19850717363 |
申请日期 |
1985.03.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
VENKATESH, BHIMACHAR |
分类号 |
G05F1/56;G05F3/24;H01L21/8249;H01L27/06;H01L27/08;H03H11/48;(IPC1-7):H03K3/26 |
主分类号 |
G05F1/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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