发明名称 Temperature compensated active resistor
摘要 A temperature compensated active resistor for use on an integrated circuit semiconductor chip is formed of a N-channel MOS transistor, a string of first, second and third transistors connected as a series of diodes, and a P-channel MOS transistor. The P-channel MOS transistor has its drain electrode connected to an output terminal in which a resistance value at the output terminal remains substantially constant over a relatively wide temperature range.
申请公布号 US4622476(A) 申请公布日期 1986.11.11
申请号 US19850717363 申请日期 1985.03.29
申请人 ADVANCED MICRO DEVICES, INC. 发明人 VENKATESH, BHIMACHAR
分类号 G05F1/56;G05F3/24;H01L21/8249;H01L27/06;H01L27/08;H03H11/48;(IPC1-7):H03K3/26 主分类号 G05F1/56
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