| 摘要 |
PURPOSE:To improve the humidity resistance of a resin-sealed semiconductor device and to contrive the improvement of the reliability theerof by a method wherein a polyimide resin is applied on the semiconductor element nd the fine Al wires. CONSTITUTION:Conductive patterns 1... consisting of cuprous oxide are directly formed on an alumina ceramic substrate 2. Giant transistor 3... are fixed on the conductive patterns 1 with solder, this semiconductor element and the electrode pads are mutually connected with fine Al wires 10 in a thermal press- welding process and the electronic circuit is formed. Then, a polyimide resin 4 is coated on the semiconductor element, the fine Al wires and the electrode pads. Then, external leads 5 are soldered to the terminals of the electronic circuit, yet the external leads 5 are molded in one body with a terminal holder 6 consisting of a resin, and moreover, an annular enclosure 8 is bonded on the insulative substrate 2. A silicone resin in gel and a resin layer 9 consisting of an epoxy resin are injected in this annular enclosure 8 and the sealing process is completed. |
