发明名称 |
CMOS contacting structure having degeneratively doped regions for the prevention of latch-up |
摘要 |
A contact structure suitable for use in a CMOS device to prevent or suppress the latch-up phenomenon in the device. It uses two degeneratively doped regions of different conductivity type with a tunnel injecting interface therebetween and a conductive segment contiguous to one of the two regions. Using such a structure as the source of an FET in a CMOS arrangement causes the emitter area and the base spreading resistance of the corresponding parasitic bipolar transistor to be reduced. This in turn causes the current gain of the parasitic transistor to decrease and the latch-up phenomenon to be prevented or suppressed.
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申请公布号 |
US4622573(A) |
申请公布日期 |
1986.11.11 |
申请号 |
US19860831098 |
申请日期 |
1986.02.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BAKEMAN, JR., PAUL E.;GEIPEL, JR., HENRY J. |
分类号 |
H01L27/092;H01L29/08;H01L29/45;(IPC1-7):H01L29/78;H01L29/88 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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