发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve the circuit characteristics of a circuit having an NPN transistor and a PNP transistor combined, by forming the NPN transistor as well as the PNP transistor into a transverse type. CONSTITUTION:In a vertical NPN transistor, the current amplification factor hFE is not decreased until collector current attains a considerably large value. In a transverse PNP transistor and a transverse NPN transistor, on the con trary, the hFE starts to decrease at a lowe collector current than the vertical NPN transistor. The transverse PNP and NPN transistors have hFE properties analogous to each other though the PNP is somewhat inferior in performance. Accordingly, if the transverse NPN transistor and the transverse PNP transistor are used to constitute a power supply circuit, these transistors can be matched with each other very well. Therefore, characteristics of the circuit as a whole are increased substantially.
申请公布号 JPS61253864(A) 申请公布日期 1986.11.11
申请号 JP19850095493 申请日期 1985.05.07
申请人 HITACHI LTD 发明人 SEKINE YASUSHI;IMAIZUMI ICHIRO
分类号 H01L29/73;H01L21/331;H01L29/72;H01L29/732 主分类号 H01L29/73
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