| 摘要 |
PURPOSE:To attain high integration and large capacity by providing the semiconductor area which is of the same conductive type and has a high impurities density, at the semiconductor substrate main surface part between capacity element forming areas in the DRAM to make the serial circuit with the element for the switch and the capacity element for accumulating the information into the memory cell. CONSTITUTION:At the upper part of the main surface of a p-type semiconductor substrate 1, a field insulating film 2 and a p-type channel stopper area 3 are formed. Next, an insulating layer 4 and a mask 21 for introducing the impurities are formed, and a p-type semiconductor area 5 to separate electrically the section between capacity elements for accumulating the information is formed. Next, by using a mask 22 for introducing the impurities and the field insulating film 2, a p<+> type semiconductor area 6 is formed, the mask 22 is removed, stretching and diffusion are executed, and after that, by using a mask 23, a MISFET forming area for the switch and an insulating film 7 are formed at the upper part of the insulating film 4 which comes to be the section between capacity elements for accumulating the information, and at the upper surface of the field insulating film 2, and an n<+> type semiconductor area 8 is formed at the main surface part of the semiconductor area 5. Finally, in order to form the capacity part of the capacity element for accumulating the information, the insulating film 4 is removed and an insulating film 9 is formed on the upper part.
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