| 发明名称 |
Garnet film for magnetic bubble memory element |
| 摘要 |
A garnet film for use in magnetic bubble devices that supports magnetic bubbles with a bubble diameter of 0.4 micron or less. The curie temperature can be made over 240 DEG C., and the garnet film used is suitable for ion implanted devices.
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| 申请公布号 |
US4622264(A) |
申请公布日期 |
1986.11.11 |
| 申请号 |
US19830543423 |
申请日期 |
1983.10.19 |
| 申请人 |
HITACHI, LTD. |
发明人 |
HOSOE, YUZURU;OHTA, NORIO;ANDOO, KEIKICHI;SUGITA, YUTAKA |
| 分类号 |
G11C11/14;C30B29/28;H01F10/24;(IPC1-7):H01F10/24 |
主分类号 |
G11C11/14 |
| 代理机构 |
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代理人 |
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