| 摘要 |
PURPOSE:To enable a device to be trimmed, by providing a stress absorbing layer constituted by a second aluminium layer above an interlayer insulation film between base and emitter electrodes which are to be trimming elements. CONSTITUTION:An N<-> type epitaxial layer 5 is formed on a semiconductor substrate 1 through an N<+> type buried layer 4. A trench isolation region 6 is formed through the N<-> type epitaxial layer 5 so as to reach the P-type semiconductor substrate 1. A P-type semiconductor region 2 is provided on the surface of the element region surrounded by the trench isolation region 6. Further, an insulation film 7 and contact holes 7a and 7b are formed. Through the contact holes 7a and 7b, electrodes 8a and 8b constituted by the first aluminium layer are contacted with semiconductor regions 2 and 3, respectively. A second aluminium layer as a stress absorbing layer 10 is formed on an interlayer insulation film 9 so as to cover the electrodes 8a and 8b. According to this construction, trimming elements can be provided without any alteration in the manufacturing processes.
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