发明名称 VAPOR GROWTH METHOD
摘要 PURPOSE:To execute vapor growth without the need for heating the entire part of a substrate to a high temp. by positioning a reactive gas ejecting nozzle in common use as an electrode so as to face the substrate and forming a thin film on the substrate by electric discharge while controlling and feeding the substrate in the direction perpendicular to the nozzle. CONSTITUTION:The tubular electrode 5 in common use as the nozzle is brought near to the substrate on a table 3 by the revolution of a motor 7 and the reactive gas is supplied together with a carrier gas from the electrode 5. A DC voltage or the like is impressed from a control power source 8 to the electrode to discharge electricity between the electrode 5 and the substrate 4, by which the reactive gas interposed therebetween is cracked. The substrate 4 facing the electrode 5 is locally heated by a power source 9 and the position of the table 3 is controlled by a numerical control device 2 to form the thin film on the substrate 4. Glow discharge is generated, if necessary, by a power source 10. The reactive gas is heated and activated by a laser beam 12a from a laser irradiating device 12 when the electrode 5 is held detached from the substrate 4 by the motor 7.
申请公布号 JPS61253367(A) 申请公布日期 1986.11.11
申请号 JP19850095816 申请日期 1985.05.04
申请人 INOUE JAPAX RES INC 发明人 INOUE KIYOSHI
分类号 C23C16/50;C23C16/44;C23C16/455;C23C16/48 主分类号 C23C16/50
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