发明名称 |
Formation of a multi-layer glass-metallized structure formed on and interconnected to multi-layered-metallized ceramic substrate |
摘要 |
In the fabrication of an interconnection package for a plurality of semiconductors or integrated circuit chips wherein a multi-layered glass or glass-ceramic superstructure with a multi-layered distribution of planar conductors is formed by a process forming vertical conductive interconnection or studs between planar conductor layers, by pre-forming a via configuration in each glass or glass-ceramic layer at the interconnection points followed by depositing the conductive studs therein. The via configuration is formed by defining a desired pattern of vias, and ablating the vias through the top of and through the glass or glass-ceramic layer, using an ultraviolet laser. The vias may be stepped-shoulder or counter-bored by using a two mask operation.
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申请公布号 |
US4622058(A) |
申请公布日期 |
1986.11.11 |
申请号 |
US19860844260 |
申请日期 |
1986.03.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEARY-RENICK, PAMELA A.;SRINIVASAN, RANGASWAMY |
分类号 |
H01L21/48;H01L23/538;H05K1/03;H05K1/11;H05K3/00;H05K3/46;(IPC1-7):B44C1/22;C03B23/26 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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