Method of making an isolation slot for integrated circuit structure

摘要

The invention comprises an improved isolation slot in an integrated circuit structure which minimizes damage to the silicon substrate. The improved isolation slot is formed by etching a slot in the substrate of an integrated circuit structure; depositing a buffer layer in the slot adjacent the walls of the slot; and forming an isolation oxide layer in the slot over the buffer layer; whereby the presence of the buffer layer between the substrate and the isolation oxide minimizes damage to the substrate by the oxide. In a preferred embodiment, the buffer layer comprises polysilicon which is partially oxidized to form the isolation oxide layer. A barrier layer is formed between the slot walls and the polysilicon buffer layer to electrically insulate the polysilicon from the adjoining integrated circuit structure.