发明名称 SEPARATING METHOD FOR WAFER AND MASK
摘要 PURPOSE:To ensure the capturing of a wafer on the upper surface of a stage by sucking the wafer with vacuum, by lifting a vertical moving stage, and bringing the sucking surface of a vacuum chuck, which is provided on the upper surface of the vertical moving stage, close to the wafer, when the jetting of nitrogen gas is stopped and the wafer is sucked with the vacuum sucking chuck again. CONSTITUTION:When, a wafer is pushed up and closely contacted with a mask, an interval T is provided between a wafer 3'' and a stage 1. From the state the interval T is provided, the vertical moving stage 1 is lifted in the direction of an arrow Z and brought close to the wafer 3'' as shown by an imaginary line 1'. For example, the stage 1 is lifted to a position 1' so that the interval t3 is provided between the stage 1' and the wafer 3''. The peripheral part of the wafer 1' is sucked with the vacuum and separated from a mask 4'. The vacuum sucking region is sequentially expanded from the periphery to the center, and the stage 1' is lowered in the direction of an arrow Z'. In this operation, atmospheric gas is readily inputted to the part between the wafer 3'' and the mask 4'. Therefore, the separating operation is made to progress smoothly.
申请公布号 JPS61252635(A) 申请公布日期 1986.11.10
申请号 JP19850093738 申请日期 1985.05.02
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 AIKO KENJI;NAMIKI YOSHIJI;ARASAKI SHIGEO
分类号 G03F9/00;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F9/00
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