| 摘要 |
PURPOSE:To suppress the intrusion of minority carriers into data storing capacitor elements, by providing a semiconductor region, whose conducting type is the same as that of a semiconductor substrate and whose impurity concentration is higher than that of the substrate, in the main surface part of the semiconductor substrate at the lower part of the data storing capacitor elements. CONSTITUTION:A P<+> type semiconductor region 6 is provided in the main surface part of a semiconductor substrate 1 at the lower part of a semiconductor region 5 of the forming region of a data storing capacitor element. The semiconductor region 6 is constituted in an area, which is the same as or larger than that of the semiconductor region 5. The semiconductor region 6 is formed so as to suppress the extension of a depletion region, which is formed on the side of the semiconductor region 5 from a P-N junction of an N<+> type semiconductor region constituting one electrode of the data storing capacitor element and the semiconductor element region 5. Since the region 6 is formed in high impurity concentration in comparison with the semiconductor substrate 1, the region 6 constitutes a potential barrier against minority carriers. Therefore, the semiconductor region 6 can suppress the decrease in capturing probability of the minority carriers, which are yielded in the semiconductor substrate 1 due to alpha rays, and also can suppress the intrusion of the minority carriers into the data storing capacitor element. Thus, software errors can be prevented. |
