| 摘要 |
PURPOSE:To simplify processes, by forming contact holes on a gate metal, thereafter oxidizing or nitriding a part, which is exposed at the contact hole part of the gate metal. CONSTITUTION:Contact holes (e) and (f) are simultaneously formed both in a diffused layer 5 and in W 4 of a gate electrode. Annealing is carried out in an oxygen atmosphere. Then, an oxide film 9 of W is formed on the surface of the W electrode, which is exposed at the part of the contact hole (f). Then, W 10 is evaporated by sputtering, and annealing is performed. Then, tungsten silicide 7 is formed on the surface of the diffused layer 5. Thereafter, the W 10, which is not reacted, is removed by H2O2 etching liquid. Then, the oxide film 9 of the W is removed, and an Al wiring material 8 is formed. Thus, a protecting film is formed, and a highly reliable product can be obtained. |
