| 摘要 |
PURPOSE:To realize easy growth of single crystal by starting and sweeping the irradiation of beam from the protruded region formed with the element forming region to said element forming region through sequential shifting. CONSTITUTION:The SiO2 film 7 and Si3N4 film 8 are provided as the insulation film on a silicon substrate 1. The SiO2 film 9 and Si3N4 film 10 are provided as the anti-reflection film 5 on a polysilicon layer 3. The SiO2 film is caused to grow by the thermal oxidation, while the Si3N4 film by the CVD method. The window region 6 of antireflection film is provided with a protruded region 11 at the starting point of the crystal growth and thereafter the width is gradually widened and the element region is then provided. Sweep of the Argon ion laser is carried out in the direction of arrow from the region 11. |
