| 摘要 |
PURPOSE:To enable photo diodes with a high converting efficiency to be employed as a photoelectric converting section without being limited by the resistance of the photoelectric converting layer, by forming electrodes connected with each pixel-storing diode of the photoelectric converting section over a scanning circuit, and by forming an array of photo diodes insulated electrically with each other and separated every pixel on the electrodes. CONSTITUTION:After a scanning circuit is formed, metal wiring 91, 92 is formed with AlSi alloy, and is sintered and flattened, and inter-layer insulating films 111, 112 are formed. A lower metal electrode of Mo is formed, and a-Si:H PIN photo diodes are formed thereon without separating the lower metal electrode into every pixel. Thereafter, RIE divides the photo diodes into 151, 152, 153... every pixel, and divides the M0 electrode into 141, 142, 143... every pixel by using the same resist pattern. After an SiNx film is deposited, RIE etches the SiNx film on the photo diodes to form insulating films 161, 162 for insulating electrically the photo diodes with each other every divided pixel. |
