| 摘要 |
PURPOSE:To perform a light modulation only by applying a modulating signal voltage to the metallic gate electrode of a vertical MIS-FET portion by integrating a semiconductor laser portion and the vertical MIS-FET portion on the same semiconductor substrate in vertical direction. CONSTITUTION:A semiconductor laser portion 17 with a double hetero structure is integrated with a vertical MIS-FET (metal-insulator-semiconductor field effect transistor) portion 18 on the upper surface of the semiconductor portion 17, said MIS-FET portion 18 having a stripelike groove 31 and a channel near the slant of the stripelike groove 31. By changing a voltage applied to the metallic electrode 11 of the vertical MIS-FET portion 18, the light output of the semiconductor portion 17 can be changed in response thereto. Since, moreover, the metallic gate electrode 11 is isolated from a semiconductor substrate by an insulating film 10, a light output control signal requires only a voltage and consumers little current.
|
