| 摘要 |
PURPOSE:To form a camel type junction or extremely shallow P-N junction under the gate electrode and to increase the barrier height, by ion-implanting a specific material into a film to serve as the gate electrode, and by diffusing it into a compound semiconductor layer by heat-treatment. CONSTITUTION:After an N-type GaAs channel region 2 is formed in a semi- insulating GaAs substrate 1, a WSix film 3 is formed. Onto the entire face of the film 3, Mg ions are implanted and patterning of the film 3 is done to form a Schottky gate electrode 3'. Next, an SiO2 film 4 is formed and an opening 4A is formed. In order to form the source region and drain region, Si atoms are introduced. After removing the film 4, an AlN film 5 is formed, serving as a protecting film for doing heat treatment. The heat treatment is done by applying a lamp annealing method. Since Mg contained in the electrode 3' is diffused extremely shallowly into the surface of the N-type GaAs channel region 2, a P-type GaAs layer 6 is formed.
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