| 摘要 |
PURPOSE:To facilitate peeling-off of a resist film and shorten a manufacturing process by a method wherein an organic material film is formed and patterned on a semiconductor wafer and, after metal for a bump is applied and a thermal impact is applied, the organic material film is peeled off. CONSTITUTION:An aluminum pad 12 is formed on a semiconductor substrate surface at a predetermined position and the other region of the surface is covered with a silicon oxide film 13. Then a titanium film 15, a copper film 16 and a nickel film 17 are laminated to form a barrier metal layer 14. Then a resist film 18 is formed on the surface to the thickness not less than 5mum and a bump region is opened by patterning and lead and tin 19 are applied to the aperture to the thickness approximately 50mum by plating as the metal for a bump. After that, a thermal impact with a temperature difference not less than 100 deg.C is applied to the film 18 to peel the film 18 off the barrier metal layer 14 and the film 18 is peeled off by a pair of tweezers or the like. |
