| 摘要 |
<p>PURPOSE:To improve the effect of separating electrically each cell, by constituting regions for separating electrically the respective photoelectric converting cells with an insulating region and a high-concentration semiconductor region having the same conductivity as the underlain main electrode region, and moreover to facilitate the manufacturing process and to reduce leak current, etc., across the cells, by forming the separating regions without etching. CONSTITUTION:On an N-type silicon substrate is formed an N<-> epitaxial layer 4 in which photo sensor cells insulated electrically with each other by element separating regions 6 are arrayed. the element separating region 6 consists of a field oxide film 24 and N<+> region 23 laid thereunder. Each photo sensor cell comprises a P base region 9 and N<+> emitter region 15 of a bi-polar transistor, polysilicon electrode 14 serving gas as a capacitor electrode for applying pulses to the P base region 9, electrode 19 connecting to the N<+> emitter region 15, and electrode 17 connecting to polysilicon 14, formed on the N<-> epitaxial layer 4, and an N<+> region 2 with a high impurity concentration and electrode 21 for feeding potential to the collector of the bi-polar transistor formed on the back face of the substrate 1.</p> |
