SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To enable the manufacture of the semiconductor devices for extra-high frequency which attains high gain small noise index by forming an electrostatic shield panel between a gate and a drain electrode of a surface protective layer. CONSTITUTION:On the surface of a GaAs semi-insulating substrate 11, an N- GaAs layer 12 is formed and a gate 14 and a drain 15 are arranged in predetermined positions of said surface. A surface protective layer 16 is formed on that surface. A groove 18 of 0.1-0.2mum width is formed on the surface protective layer 16 by etching using the converged ion beams 19 as shown by the arrow. The ion beams are projected into the groove 18 while the gas 20 including a metal designated by the arrow of dotted lines is ejected to the front end of the converged ion beams, thereby forming a metallic electrostatic shield panel 17 on the surface protective layer 16 of silicon dioxide between the gate 14 and the drain 15.