| 摘要 |
PURPOSE:To prevent the occurrence of slippage and to rapidly perform the heat-treatment by injecting the cooling gas onto the middle part of a semiconductor substrate after heating so as to decrease the difference in temperature of the circumference and the semiconductor substrate. CONSTITUTION:A semiconductor substrate 1 is transferred to a heating chamber 3 to be irradiated light from a light source within the chamber 3. The substrate 1 is cooled after heating. At the time of the cooling, the middle part of the substrate 1 is injected the cooling gas with a nozzle 9 to reduce the temperature difference from the circumference. Inactive gas such as nitrogen gas and algon gas is best suited for the gas to be used. Thus, the occurence of slippage is prevented to rapidly perform the heat-treatment. |
