| 摘要 |
PURPOSE:To prevent the substrate current from increasing even in reduction of channel length, by providing with a substrate leak current preventing layer made of non-doped compound with a wider band gap as compared with semiconductor constituting a channel layer, with being adjoined to the bottom of a one-conductive type compound semiconductor channel layer. CONSTITUTION:With being adjoined to the bottom of an N-type GaAs channel layer 4 being a one-conductive type compound semiconductor channel layer, an AlGaAs substrate leak current preventing layer 5 made of non-doped compound semiconductor is formed. Since AlGaAs has a wider band gap than GaAs, there does not exist fear that electrons flowing between an N<+> type GaAs source region 9 and N<+> type GaAs drain region 10 both being the same conductive compound may pass through the substrate 1 side. |
