| 摘要 |
PURPOSE:To reduce unevenness at the interface between a second insulating film and first non-single-crystalline silicon film and to increase the withstanding voltage of the second insulating film, by irradiating light having a plural of wavelength onto the first non-single-crystalline silicon film before forming the second insulating film. CONSTITUTION:On the surface of a P<->-type silicon substrate 21, a field oxide film 22 is formed, and then a first thermal oxidation film 23 is formed. Next, a first polycrystalline silicon film 24 is deposited. At this time, phosphrus is doped while PH3 gas is flowed. When the depositing temperature is below 580 deg.C, or below 560 deg.C to make the ratio of amorphous portions large or to make amorphous, the surface can be more smoothly formed on thermal oxidation after lamp irradiation. Next, after a CVD oxide film 25 is deposited on the entire face, it is irradiated in two steps with halogen lamp light. The CVD oxide film 25 serves for preventing occurrence of unevenness by applying pressure to the first polycrystalline silicon film 24.
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