| 摘要 |
PURPOSE:To highly accurately control the temperature raise profile for a substrate by a method wherein a filter performing the selective absorption of the heating light is arranged between a heater and a semiconductor substrate, and the wavelength of the heating light to be irradiated on the substrate is selectively selected so as to selectively heat the specific impurity. CONSTITUTION:Over a semiconductor substrate 3, a heater 8 irradiating the heating light on a substrate 3 is mounted on the lower side of a box cover 7. A filter 9 is arranged between the heater 8 and the substrate 3. The filter 9 selectively absorbs the light of specific wavelength out of the light irradiated from the heater 8 and pass the light of other wavelength, with the heating of the substrate 3 accomplished only by the light passing through. Thus, it is made possible to irradiate the light of specific wavelength by arbitrary selecting a filter 9, thereby allowing an arbitrary temperature raise profile to be set. |
