| 摘要 |
<p>PURPOSE:To avoid cracking, breakage and element lack of a semiconductor device by a method wherein a substrate and a metal film formed on that substrate are subjected to a heat treatment and an amorphous layer is formed in the substrate region under the metal film and a cut is formed in the surface region of the substrate corresponding to a scribe line. CONSTITUTION:Metal film layers 17 as a guard pattern are formed on a substrate surface along a scribe line 12 and on both sides of the line 12. The substrate 12 and the film layers 17 are subjected to a heat treatment in an inert gas. Metal atoms in the film layers 17 are diffused into the substrate 11 by the heat to form amorphous metal layers 18 in the surface of the substrate 11 near the regions under the film layers 17. An layer insulation film 13 is formed over the whole surface of the wafer by a CVD method. A silicon nitride film 13 is formed over the whole surface of the wafer as a passivation film. A cut 16 is formed in the wafer from the surface of the nitride filn 15 along the line 12. With this constitution, cracking, breakage and element lack of a semiconductor device can be avoided.</p> |
