| 摘要 |
PURPOSE:To prevent penetrating phenomenon from resulting, and to stop easily etching at the face of a thin capacitor insulating film when capacitor electrode material is patterned, by constituting a three-layer structure in which the capacitor electrode material of a polycrystalline silicon film is put between metal or metal silicide films such as high-melting-point films. CONSTITUTION:After a molybdenum silicide film 5, a polycrystalline silicon film 6 with impurities diffused therein and a tungsten film 7 are sequentially deposited, a resist film 8 is patterned only over regions for a desired capacitor to be formed. Next, using the resist film 8 as a mask, the tungsten film 7 is etched by reactive etching employing Cl2 gas. Thereafter, the polycrystalline silicon film 6 is photo-etched, and at this time the etching is stopped at the face of the molybdenum silicide film 5. After the molybdenum silicide film 5 is removed, by using the same mask, an inter-layer insulating film 9 is formed. After a gate oxide film 10, gate electrode 11, N-type impurity diffusion layers 12, 13 are formed and an insulating film is last formed, Al wiring 16 is formed through a contact hole 15 formed by reactive ion etching. |
