| 摘要 |
PURPOSE:To solve a defect about a surface characteristics of a-Si type photosensitive body, and to improve a maintenance of an electric charge potential by providing a surface reforming layer on an electric charge generating layer, and an electric charge transfer layer under the electric charge generating layer respectively. CONSTITUTION:The photosensitive body 39 is constituted by laminating the P type electric charge blocking layer 44 composed of an oxygen contg. a-SiN:H (a-SiNO:H) heavily dopped with the group IIIa element of the periodic table,the electric charge transfer layer 42 composed of an oxygen contg. a-SiN:H(a-SiNO: H), the electric charge generating layer 43 composed of a-Si:H and the surface reforming layer 45 composed of an oxygen contg. a-SiN:H(a-SiNO:H) on the drum like electroconductive supporting substrate 41. The photoconductive layer 43 has sufficiently large optical sensitivity of a ratio of the resistivity rhoD in a dark place and the resistivity rhoL in a light irradiation, thereby having a good optical sensitivity. In order to obtain a good picture quality after the 200,000 copies are taken, the oxygen content of the surface reforming layer is necessary to be 1-50at% and the oxygen content of the electric charge transfer layer is necessary to be 0.05-5at% respectively. |
