| 摘要 |
The invention relates to a microwave transistor including emitter lands 9 connected together electrically by conducting strips 10, 10' deposited on an insulating layer 7. Contact zones 5 of the base 3 are covered by a metallisation 6 underlying the insulating layer 7. Between the emitter land lines 9, the metallisations 6 of the base 3 are connected by a first comb-like metallisation whose fingers are interdigitated with those of a second comb-like metallisation interconnecting emitter lands 9. The method of manufacture includes the production of the metallisation 6 with a refractory metal when the emitter lands 9 and the base contacts 5 are installed. <IMAGE>
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