METHOD FOR GROWING TUNGSTEN SILICIDE FILM

摘要

PURPOSE:To form a tungsten silicide wiring layer having excellent adhesiveness and conductivity on a substrate by supplying gaseous WF6 and gaseous SiH4 together with gaseous H2 into a reaction furnace contg. the heated semiconductor substrate and decomposing thermally the gases. CONSTITUTION:The substrate 1 which is a silicon wafer is put into the reaction furnace 2 the inside of which is evacuated to the reduced pressure through a discharge port 4. The substrate is then heated to 300-350 deg.C by a heater 3. The gaseous WF6 at 2cc/min ratio, the gaseous SiH4 at 120cc/min ratio and the gaseous H2 at 20-30cc/min ratio are mixed with the gaseous He as a carrier gas and the mixture composed thereof is introduced into the furnace through a gas introducing port 5. The gaseous WF6 and the gaseous SiH4 are thermally decomposed and the tungsten silicide wiring film contg. W at a high ratio and having the excellent adhesion to the Si wafer of the substrate and conductivity is formed on the substrate 1. The tungsten silicide film does not peel from the Si wafer substrate 1 even when subjected to a heat treatment such as annealing.