| 摘要 |
PURPOSE:To obtain a fine pattern high in resolution by using a developing soln. contg. fatty acid esters in the specified b.p. range for developing a positive type radiation resist contg. a copolymer of a specified styrene type monomer and a specified acrylate type monomer. CONSTITUTION:The positive type radiation resist contains a copolymer of repeating units each represented by formula I and those each represented by formula II, and in these formulae, R<1>, R<2>, R<3> are each halogen, lower alkyl, lower haloalkyl, OH, CN NH2 or the like, R<4> is lower alkyl, lower haloalkyl, or CN, and R<5> is lower alkyl, lower haloalkyl, aryl, or aralkyl. This resist is developed with a developing soln. contg. fatty acid ester in the b.p. range of 70-180 deg.C alone or in its mixture at room temp. thus permitting an image high in contrast to be formed. |
