Semiconductor component having an increased surface breakdown voltage

摘要

The surface breakdown voltage of planar semiconductor components can be increased by there being arranged, between the planar zones (3, 4) and the edge (7) of the semiconductor body, a field electrode (17) whose distance to the surface of the semiconductor body increases towards the edge. This is facilitated by the use of an insulating layer (6) which partly consists of a phosphorus silicate glass or a boron phosphorus silicate glass and has at least one flank (8) which rises towards the edge.