发明名称 REFERENCE VOLTAGE GENERATING CIRCUIT
摘要 PURPOSE:To facilitate making a circuit into an IC and attain a reference voltage which is not dependent upon temperature and is high, by providing a transistor TR to which a current density is set, circuits where plural diodes are connected in seires, and a current by-pass circuit. CONSTITUTION:A constant current is flowed to the first diode circuit 6, where N-number of diodes are connected in series, through a resistance 4 to form a base bias voltage of a TR 8, and the base current is flowed to the TR 8 through a resistance 6, and the collector current is flowed there through a resistance 10. A voltage balanced state is formed in the constitution of N-number of diodes by diodes between the base and the emitter of the TR 8, a resistance 14, and the second diode circuit 16. The ratio of the current density between the circuit 6 and the TR 8 to that between the circuit 6 and the circuit 16 is set to a specific value, and the current flowed to the TR 8 is flowed to the side of a by-pass circuit 23 to establish the current balance. Thus, the dependency upon temperature is resolved by relations between the current density ratio and the resistance ratio of the resistance 10 to the resistance 14, and the reference voltage which is N-number of times as high as a band cap voltage is obtained.
申请公布号 JPS61249122(A) 申请公布日期 1986.11.06
申请号 JP19850090326 申请日期 1985.04.26
申请人 ROHM CO LTD 发明人 SHIYOU KENZOU;SAITO HIROYUKI
分类号 G05F3/30;(IPC1-7):G05F3/30 主分类号 G05F3/30
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