| 摘要 |
PURPOSE:To obtain a resist pattern without using a harmful solvent at the time of development by dissolving an alkali-soluble polymer contg. silicon together with another polymer in a solvent, and using the obtained soln. as the material of a resist film. CONSTITUTION:An alkali-soluble polymer having polydiphenylsiloxane as a skeleton, and alkali-soluble groups, such as OH or COOH, is prepared by chloromethylating polydiphenylsiloxane, and forming OH or COOH groups, etc. This polymer is dissolved together with another polymer, such as a CS2/methacryloyl chloride copolymer, to form the material of a resist film. The substrate to be treated is coated with said resist material, a pattern is depicted with electron beams, and developed with an alkali type soln. to form a positive type resist pattern. |
