PROCESS FOR PRODUCING A MONOLITHIC INTEGRATED CIRCUIT HAVING AT LEAST ONE PAIR OF COMPLEMENTARY FIELD-EFFECT TRANSISTORS AND AT LEAST ONE BIPOLAR TRANSISTOR

摘要

A method for producing a monolithic integrated circuit having at least a pair of complementary field effect transistors and at least one bipolar transistor is described. A stripe of a relatively thin oxide layer formed during the gate oxide process for the field effect transistors separates the emitter region area and collector contact region area of the bipolar transistor. During a separate masked ion implantation step, the base zone doping material of the bipolar transistor is implanted. The emitter zone is diffused from a polycrystalline emitter electrode formed during the processing of the gate electrodes.