| 摘要 |
PURPOSE:To assure etching terminal detection by increasing the intensity of luminous spectrum of reacted product by a method wherein, when a semiconductor substrate is etched with plasma, the etching amount of lower member is increased by means of mixing high plasma reactive etching gas. CONSTITUTION:Al or Al alloy as lower member i formed on a semiconductor substrate and the overall surface is covered with SiO2 or Si3N4 as an interlayer insulating film to be etched to make a window in the film so that the surface of lower member may be exposed by the procedure described as follows. In other words, the interlayer insulating film is etched with flon base gas such as CF4, SF6 etc. containing Cl gas reacting to Al but not reacting to the interlayer insulating film. Through these procedures, any exposure of Al surface can be detected with easily discriminated luminous spectrum by producing Al chlorine by reaction of Cl with Al as soon as the window is opened. |
