| 摘要 |
PURPOSE:To reduce the degree of peeling off of a wiring by a method wherein a film of high melting point metal silicide whose silicon content is higher than the content of high melting point metal is formed between a conductive polycrystalline silicon film and a high melting point metal film. CONSTITUTION:A polycrystalline Si film 5-1 is formed by a thermal decomposition of monosilane and a WSi4 film 5-2 with rich Si content is formed by a decomposition of a mixed gas of WF6 and SiH4 at a certain temperature. Further, a tungsten film 5-3 is selectively made to grow by a decomposition of a mixed gas of WF6 and H2. In this structure, respective silicon contents of the wiring layers are reduced in order from the bottom to the top. With this constitution, the stress between the wiring layers and the foundation at the time of annealing is reduced and the stress inside the wiring layers is also reduced so that the degree of cracking in the wirings and peeling off of the wirings can be reduced. |
