| 摘要 |
PURPOSE:To make it possible to evaluate a wafer without preparing an individual element, by cutting a semiconductor wafer, in which electrodes are formed on both surfaces, preparing rod shaped samples, contacting measuring electrodes between both electrodes of the sample, and measuring characteristics. CONSTITUTION:After electrode layers are formed on both surfaces, a semiconductor wafer is cut into rod shaped samples S. When the characteristics of a laser element included in the samples S are measured, the tip of a measuring electrode 12 and a protruded electrode 14a are contacted with the upper and lower surfaces of the samples S. A pulse current is supplied between an upper plate 11 and a base 14. Light emitted from the laser element is received, and the characteristics are measured. In this measuring method, since the protruded electrode 14a is provided, the current flows through a part of the sample concentratedly. Thus, the same effect, when a chip is prepared and measurement is performed, is obtained. In this method, the distribution of the light emitting characteristics can be readily checked by changing the position of the samples S. |
