| 摘要 |
PURPOSE:To suppress a voltage fluctuation and keep excellent heat resistant property even if the area is reduced by a method wherein, after SiO2 of a bird beak part is removed by etching using a photoresist mask, a Schottky junction is formed. CONSTITUTION:Photoresist patterns 5 are formed on bird beak parts 11 of an SBD formation region on an Si substrate 2 by photolithography. SiO2 of the bird beak part 11 is removed by etching utilizing the photoresist pattern 5 as a mask. The method of etching the bird beak 11 may be an anisotropic dry etching or a wet etching with a mixture solution of hydrogen fluoride and ammonium fluoride. The area of a contact hole 10 is increased by the etching of the bird beaks 11 and this area is determined by the photoresist patterns 5 whose areas are very uniform. Therefore, variation of the areas especially within a wafer surface and between wafers can be minimized.
|
