| 摘要 |
PURPOSE:To suppress a short channel effect created by annealing by a method wherein, after a gate electrode is processed and the first insulation film and the second insulation film are formed, an anisotropic dry etching is carried out. CONSTITUTION:An activation layer 2 is formed on a semi-insulating GaAs substrate 1 employing Si as an ionic species. Then a W5Si3 film is formed as a heat-resistant gate electrode 3 utilizing a photoresist as a mask and an SiO2 film 4 is formed and successively an SiN film 5 is formed. Then the SiO2 film 4 and SiN film 5 only are left on the side walls of the gate electrode 3 and the SiO2 film 4 only is left on the part other than the side walls by an anisotropic dry etching. Si ions are implanted through the SiO2 film utilizing a photoresist 6 as a mask to form a high-concentration N-type impurity layer 7. After the SiO2 film 4 and the SiN film 5 are removed, a new SiO2 film 8 is formed and annealed to activate the N<+> type layer 7. The a new source/drain electrode Au/Ni/AuGe 9 is formed on the N<+> type regions 7 and the ohmic contact can be obtained by an alloy processing.
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