| 摘要 |
PURPOSE:To obtain a high-precision electrode by a method wherein, when the electrode is provided on the semiconductor substrate, a resist pattern, which is improved in its heat resistance by adhering a polymer layer thereon excluding its opening, is formed on the surface of the semiconductor substrate and the electrode layers, which are adhered on the surface of the substrate using the resist pattern as the spacer, are lifted off. CONSTITUTION:A positive-type resist consisting of a polymethyl isopenillic ketone is applied on the surface of an Si substrate 11 and a resist pattern 12 having an opening on a part of the surface of the Si substrate 11, which is attempted to form the electrode, is formed by performing exposure and developing processes using a far ultraviolet light. Then, a thin polymer layer 13 to be used for enhancing the heat resistance of the resist pattern is provided on the surface of the resist pattern 12 excluding the opening, and an Au layer 142 and a Ti layer 152, which are the materials for the electrode, are laminatedly evaporated thereon. The peripheral sag of the pattern 12 is prevented by the polymer layer 13 in such a way, the polymer layer 13 is lifted off along with the layers 142 and 152 being adhered thereon and the electrode, which consists of an Au layer 141 and an Ti layer 151 and is good in configuration, is made to remain only in the opening. |
