发明名称 MAGNETO-RESISTANCE EFFECT TYPE HEAD
摘要 PURPOSE:To improve an insulating characteristic and to make possible the stable operation of an MR element at the adequate bias point by setting large the disposition spacing between the MR element layer and magnetic substrate and small the disposition spacing between the MR element layer and shielding magnetic material layer having the small area where both face each other. CONSTITUTION:The MR element layer 23 consisting of 'Permalloy(R)' or the like and a conductor layer 24 for shunt bias consisting of Ti or the like are directly laminated onto the magnetic substrate 21 via the 1st insulating layer 22 consisting of SiO2 and a shielding magnetic material layer 26 consisting of 'Permalloy(R)' or the like and an insulating porotective layer 27 consisting of SiO2 or the like are successively laminated atop the same via the thin 2nd insulating layer 25 consisting of SiO2, etc. The head is so disposed with respect to a magnetic recording medium 29 such as magnetic tape that the surface thereof to slide with the medium faces the traveling direction of the medium 29 and that the MR element layer 23 faces the thickness direction. The disposition spacing of the MR element layer 23 with respect to the magnetic substrate 21 is substantially large with such constitution, by which the insulating characteristic is improved. The disposition spacing between the MR element layer 23 and the shielding magnetic layer 26 is decreased.
申请公布号 JPS61248211(A) 申请公布日期 1986.11.05
申请号 JP19850090367 申请日期 1985.04.25
申请人 FUJITSU LTD 发明人 TAKAGI HITOSHI;HOSONO KAZUMASA
分类号 G11B5/39 主分类号 G11B5/39
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